Korean tech giant achieves world’s first breakthrough
Samsung Electronics said this week that it had developed an in-memory computing technology based on MRAM for the first time in the world.
The technology, which merges memory and system semiconductors to reduce power consumption and latency, is suitable for next-generation artificial-intelligence chips.
The Seoul-based company said that MRAM has many advantages, including operation speed, endurance, and large-scale production. But scientists struggled to achieve advancements on it because of its low resistance.
Samsung said that its researchers had provided a solution to the issue by an architectural innovation.
“Our researchers succeeded in developing an MRAM array chip by replacing the standard architecture with a new one that addresses the problem of small resistances of individual MRAM devices,” a Samsung official said.
The company tested the performance of the new tech to learn that it achieved an accuracy of 98 percent in the classification of hand-written digits and a 93 percent accuracy in identifying faces from scenes.
The illustrious journal Nature published the breakthrough online in a paper whose first author is Jung Seung-chul of Samsung Advanced Institute of Technology (SAIT).
“In-memory computing draws similarity to the brain in the sense that in the brain, computing also occurs within the network of biological memories, or synapses, the points where neurons touch one another,” Jung said.
“In fact, while the computing performed by our MRAM network for now has a different purpose from the computing performed by the brain, such solid-state memory network may in the future be used as a platform to mimic the brain by modeling the brain’s synapse connectivity.”
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